Electron beam lithography with plasma-assisted filling for increased-throughput patterning with negative tone electron beam resist

Electron beam lithography with plasma-assisted filling for increased-throughput patterning with negative tone electron beam resist

Technology Title

Plasma-assisted filling for electron beam lithography

 

Technology Overview

Electron-beam lithography (EBL) is a form of maskless lithography tool that is widely used in  nanofabrication due to its rapid-prototyping and high-resolution patterning capabilities. However, the patterning process employing EBL typically suffers from low throughput due to  the patterning process of scanning across all designated pixels by a scanning focused electron  beam. This technology introduces the use of plasma treatment to increase the patterning  throughput for closed polygon structures in EBL process without affecting the resolution of the  patterned structures, allowing the patterning efficiency of EBL to be enhanced by 50 times and above.  

 

This technology is potentially useful for manufacturer of beam lithography tool such as electron  beam lithography (EBL) and focused ion beam lithography (FIB) to develop next generation  lithography system for high volume fabrication equipment. In addition, this technology could  also be useful in semiconductor and nanophotonic industry for rapid prototyping of photomask 

and photoreticle in the fabrication process which could help improving the manufacturing cost  of photomask fabrication. 

 

Technology Specifications 

This technology provides a device comprising a substrate and a patterned structure formed  by the method comprising:  

  1. forming a resist layer on the substrate; 
  2. exposing a first portion of the resist layer to a focused electron beam to form a  modified first portion 
  3. performing a plasma treatment on a surface of the resist layer, including on a surface  of the second portion of the resist layer to form a modified surface portion of the  second portion of the resist layer, resulting in a plasma treated resist layer; and  
  4. performing development of the plasma treated resist layer to form the patterned  structure on the substrate corresponding the second portion of the resist layer. 
Sector

Semiconductor 

Market Opportunity

The global semiconductor manufacturing equipment market was estimated at US$ 72.69  billion in 2021. It is expected to grow to US$ 122.1 billion by 2028. The market is driven by a spike in demand for consumer electronics. As per the SEMI’s World Fab Forecast issued in June 2021, 19 new high volume fabrication facilities were built in 2021, with another 10 high volume fabrication facilities expected to be built in 2022. Thus, the growing demand for semiconductor fabrication facilities provides lucrative opportunities for the global  semiconductor manufacturing equipment market. 

Applications

It can be used for a wide range of nanostructured devices including but not limited to electronic devices, opto-electronic devices, quantum structures, metamaterials, transport mechanism  studies of semiconductor/superconductor interfaces, microelectromechanical systems,  optical, and photonic devices. 

Customer Benefits
  • Only need to write the boundary of the structure during electron beam writing process  and still able to get a full polygon structure. 
  • Reduce the writing time of electron beam process by 50 times and still get the full  structure.
  • Significant improvement to the patterning efficiency.
IP Status

US and Singapore Patent applications 

Stage of Development

TRL 3 

 

 

 

 

NAME OF TECHNOLOGY

 

MANAGER: Dr Ler Ser Yeng 

 

EMAIL: seryeng_ler@sutd.edu.sg

 

 

NAME OF PRINCIPAL

 

INVESTIGATOR: A/P Joel Yang 

 

EMAIL: joel_yang@sutd.edu.sg