Programme Schedule 2024/25

The MTD (IC Design, Failure Analysis and Reliability) is a one-year full-time coursework-based Master programme. It comprises eight courses (96 credits): two core design courses and six specialised courses, including a two-month internship in Term 3, organised as follows:

Term 1 (Sep - Dec)
Course Title Credit Points Course Type
Innovation by Design 12 Design Core
Semiconductor Device Technology and Design: Silicon and Beyond 12 Specialisation Core
Digital IC Design 12 Specialisation Core

Term 2 (Jan - Apr)
Course Title Credit Points Course Type
Design Science 12 Design Core
Materials and Design for Semiconductor Technology 12 Specialisation Core
Reliability Engineering and Failure Analysis of Advanced CMOS Devices 12 Specialisation Core

Term 3 (May - Aug)
Course Title Credit Points Course Type
Wafer Fabrication, Defect Characterisations and Yield Enhancement for IC Production 12 Specialisation Core
Advanced Failure Analysis Techniques for Semiconductor Devices 12 Specialisation Core
A two-month internship (Jul - Aug) at Wintech-Nano Technology in Suzhou, China
Satisfactory completion of the internship is required to graduate from the programme.

Course Descriptions

Innovation by Design (Term 1)

The focus of this course is the integration of marketing, design, engineering and manufacturing functions in creating and developing a new product, system or service. The course will go through the different phases of designing a new product, system or service using the four Ds of the four-phase Design Innovation Cycle of "Discover-Define-Develop-Deliver". The course will focus on some of the critical success factors for new product development, with an early emphasis on design thinking. Students will be given a design challenge to complete.

Semiconductor Device Technology and Design: Silicon and Beyond (Term 1)

This course introduces basic semiconductor device physics and design, semiconductor materials and their applications in semiconductor device technology. Bottleneck of silicon technology at the sub-10-nm regime will be discussed. Additionally, it will introduce new materials and device architectures that may overcome the challenges of silicon technology. Upon completion of this module, students will be familiar with the basic device physics and operation of semiconductor devices as well as understanding on the challenges and prospects of next-generation semiconductor technology.

Digital IC Design (Term 1)

Topics relating to the design and analysis of digital circuits implemented in integrated circuits, including transistor-level design and simulation, combinational and sequential logic, memory circuits, and timing analysis, will be covered. Techniques for testing and verification of digital circuits will also be discussed and there will be hands-on experience with electronic design automation (EDA) tools and integrated circuit (IC) fabrication processes.

Design Science (Term 2)

This course introduces students to design science where many design principles and methods will be reviewed, applied and analysed. Students will learn to make connections between design science and other fields, such as engineering, and how principles in design science can be used to advance these fields. The class will cover a broad set of design methods such as customer needs analysis, methods in creativity, functional modelling, design for X and design for testing and verification.

Materials and Design for Semiconductor Technology (Term 2)

This course covers the use of different TCAD device modelling and simulation software tools to guide in the choice of materials for logic and memory devices and assess the electrical–mechanical–thermal co-design of devices, circuits, and packages through the use of multiphysics simulation tools.

Reliability Engineering and Failure Analysis of Advanced CMOS Devices (Term 2)

The reliability study of advanced complementary metal-oxide semiconductor (CMOS) devices requires detailed study on the working and performance to ensure their usability in electronics industry. The reliability analysis highlighting electrical and physical properties may reveal device performance and reliability concern on the use of these devices in electronics applications. At the end of the course, students will get in-depth knowledge on the reliability and failure mechanisms in CMOS devices and the technical background to identify and solve reliability/failure issues.

Wafer Fabrication, Defect Characterisations and Yield Enhancement for IC Production (Term 3)

Students will learn the processes of wafer fabrication, advanced analysis and characterisation, techniques and instruments for yield enhancement of wafer fabrication.

Advanced Failure Analysis Techniques for Semiconductor Devices (Term 3)

Students will learn the fundamentals of advanced failure analysis techniques in IC design and packages, identify and isolate failures in IC devices using destructive and non-destructive technologies, including EMMI/OBIRCH, Plasma-FIB, nano-probe, 2D/3D x-ray, etc.

A two-month internship at Wintech-Nano Technology (Term 3)

Gain hands-on experience in cutting-edge semiconductor testing and analysis facilities at Wintech-Nano’s premises in Suzhou, China. Internship is not credit-bearing but satisfactory completion is a requirement to graduate from the programme.

Contact Us

For enquiries, please email: MTD@sutd.edu.sg

For applicants residing in China, please email: MTD_CN@sutd.edu.sg

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